Description:

5 x IRF830 N-Channel MOSFET + 5 x 10N60 N-Channel MOSFET.
IRF830 has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
10N60 has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
IRF830 Drain Source Voltage: 500V; Drain Current: 5A.
10N60 Drain Source Voltage: 600V; Drain Current: 10A.

Specification:

IRF830:
Mounting Hole Diameter: Approx. 3mm/0.12 inch
Pin Size ( L x Pitch): Approx. 13x2mm/0.51x0.08 inch
Total Size (L x W x H): Approx. 29x10x4mm/1.14x0.39x0.16 inch
Package: TO-220AB
10N60:
Mounting Hole Diameter: Approx. 3mm/0.12 inch
Pin Size ( L x Pitch): Approx. 13x2mm/0.51x0.08 inch
Total Size (L x W x H): Approx. 29x10x4mm/1.14x0.39x0.16 inch
Package : TO-220F

Package Includes:

5 Pieces IRF830 N-Channel MOSFET
5 Pieces 10N60 N-Channel MOSFET